? wideband: 1.0 to 12 ghz ? nf (ext match): 1.2 db @ 2.0 ghz 1.6 db @ 6.0 ghz 1.8 db @ 12.0 ghz ? p-1db: 16 dbm ? oip3: 27 dbm ? gain: 17 db ? bias condition: vdd = 5 v idd = 55 ma ? 50-ohm on-chip matching ? unconditionally stable: .5 ghz to 20 ghz ? narrow-band optimization with external tuning ? gain control option available with 2nd gate control voltage features applications MLA-01122B 1 - 12 ghz low-noise mmic amplifier data sheet rev a may 2010 description ? microwave point-to-point radios ? satellite and telemetry communications ? test instrumentation ? ew receiver systems ? wide-band communication systems ? commercial wireless systems electrical specifications: vdd=+5.0v, vg1=+0.15v, vg2=+2v, idd=55 ma, ta=25 c, zo=50 ohm (1) 4268 solar way fremont, ca 94538 sales@mwtinc.com p (510) 651-6700 f (510) 952-4000 www.mwtinc.com the MLA-01122B is a fully-matched broadband low-noise mmic amplifier utilizing high-reliability low-noise gaas phemt technology. this mmic is suited for satellite communications, microwave radios, instrumentation, wideband systems and also many commercial wireless applications where low-noise figure with high-gain is desirable. it has excellent gain (17 db) and noise figure (1.6 db, mid-band) over a broad frequency range. typical p-1db is 16.5 dbm and oip3 is +27dbm @ 6 ghz. it has on-chip bias circuit, choke and dc blocking to provide bias stability and ease of use. the 2 nd gate voltage input can be used for gain control if necessary. for packaged options, contact factory for further details. parameter test conditions typical data units frequency range 1-12 ghz gain 1 - 8 ghz 10 - 12 ghz 17 19 db gain flatness 1 - 8 ghz 1 - 12 ghz 0.6 1.5 +/-db input return loss 2 ghz 5 ghz 10 ghz 15 9.5 12 db output return loss 12 db output p1db 2 ghz 6 ghz 10 ghz 12 ghz 17 16.5 15.5 14.0 dbm output ip3 @ 0 dbm/tone, 1 mhz separation 2 ghz 6 ghz 12 ghz 30 27 25 dbm noise figure 2 ghz 6 ghz 12 ghz 1.2 1.6 1.8 db operating bias conditions: vdd idd vg1=+0.15v, vg2=+2v +5 55 v ma s tability factor k 0.5 to 20 ghz > 1 (1) a ll data is measured on 50 ohm carrier w ith vg2 bias derived from vdd bias using resistive voltage divider and external tun ing stubs show n in assembly diagram.
4268 solar way fremont, ca 94538 sales@mwtinc.com p (510) 651-6700 f (510) 952-4000 www.mwtinc.com MLA-01122B 1 - 12 ghz low-noise mmic amplifier data sheet rev a may 2010 typical rf performance: vdd=+5.0v, vg1=+0.15v, vg2=+2v, idd=55 ma, ta=25 c, zo=50 ohm (1) g ain v e rsus fre que ncy & t e mp 11 13 15 17 19 21 01234567891011121314 frequency (ghz) gain (db) +25 c +85 c - 40 c return loss versus frequency -20 -15 -10 -5 0 01234567891011121314 frequency (ghz) return loss (db) input output isolation versus frequency -30 -20 -10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) isolation (db) noise figure versus frequency & temp 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) noise figure (db) +25 c +85c - 40c p-1db versus frequency & bias 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) p-1db (dbm) 5v,55ma 5.5v,61ma 6v,61ma output ip3 versus frequency 5v, 55m a, @ 0 dbm /tone 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) oip3 (dbm)
assembly diagram: for use with on-chip match option 4268 solar way fremont, ca 94538 sales@mwtinc.com p (510) 651-6700 f (510) 952-4000 www.mwtinc.com notes: 1) 1 st close-in bypass cap values must be at least 100pf and placed < 25mil from chip edge. the location of large bypass cap 0.01uf is not critical but recommended close to die. vg1 & vg2 large bypass cap 0.01uf may be removed to save space. 2) vg2 voltage may be derived from vdd supply using resistive voltage divider 3) rf in/out bonds must be 2 wires of length < 20 mil & 0.7 mil diameter for best rf performance. 4) tuning stubs (10 x 40 mil) on the 50 ohm line will improve wide-band i/o return loss especially at frequencies > 8 ghz . location may be tuned for best rf performance . all data shown includes the tuning stubs. input return loss can be further optimized for narrower frequency band. absolute maximum ratings MLA-01122B 1 - 12 ghz low-noise mmic amplifier data sheet rev a may 2010 sym bol param eters units max vdd drain voltage v 7 idd drain current ma 75 pdis s dc pow er dis s ipation w 0.4 pin max rf input pow er dbm 13 toper operating case/lead temp range oc -40 to +85 tch channel temperature oc 150 tstg storage temperature oc -60 to 150 exceeding any on of these limits may cause permanent damage.
mechanical information notes: 1) die size: 1.57 x 1.31 x 0.1 mm 2) rfin, rfout, vg1, vg2 bond pad size is: 80 x 80 micron. 3) backside of chip is metalized and provides dc & rf ground. 4) bond pad & backside metallization: gold 4268 solar way fremont, ca 94538 sales@mwtinc.com p (510) 651-6700 f (510) 952-4000 www.mwtinc.com outline drawing functional diagram MLA-01122B 1 - 12 ghz low-noise mmic amplifier data sheet rev a may 2010
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